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NST3946DW1T1 - ON Semiconductor

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NST3946DW1T1 Dual General Purpose Transistor

www.DataSheet4U.com MBT3946DW1T1 Dual General Purpose Transistor The MBT3946DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mo.

Features

alue 40 −40 60 −40 VEBO 6.0 −5.0 IC 200 −200 ESD HBM>16000, MM>2000 V 46 = Specific Device Code d = Date Code Symbol PD RqJA TJ, Tstg Max 150 833 −55 to +150 Unit mW mAdc 46d Vdc Unit 1 2 3 DataShee Vdc DataSheet4U.com SOT−363−6/SC−88 CASE 419B Style 1 VCBO Vdc MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Package Dissipation (Note 1) TA = 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Range ORDERING INFORMATION °C/W °C Device MBT3946DW1T1 Package SOT−363 Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel MBT3946D.

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