www.DataSheet4U.com NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in one package, this device is id.
L CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) - 55 to +150 Unit mW mW/°C A2 = Specific Device Code D = Date Code ORDERING INFORMATION °C/W Device NST3906DXV6T1 Package SOT-563 SOT-563 Shippin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NST3906DXV6T5 |
ON Semiconductor |
(NST3906DXV6T1 / NST3906DXV6T5) Dual General Purpose Transistor | |
2 | NST3906F3T5G |
ON Semiconductor |
PNP Transistor | |
3 | NST3904DP6T5G |
ON Semiconductor |
Dual General Purpose Transistor | |
4 | NST3904DXV6T1 |
ON Semiconductor |
(NST3904DXV6T1 / NST3904DXV6T5) Dual General Purpose Transistor | |
5 | NST3904DXV6T1G |
ON Semiconductor |
Dual General Purpose Transistor | |
6 | NST3904DXV6T5 |
ON Semiconductor |
(NST3904DXV6T1 / NST3904DXV6T5) Dual General Purpose Transistor | |
7 | NST3904DXV6T5G |
ON Semiconductor |
Dual General Purpose Transistor | |
8 | NST3904F3T5G |
ON Semiconductor |
NPN Transistor | |
9 | NST3946DW1T1 |
ON Semiconductor |
Dual General Purpose Transistor | |
10 | NST3946DXV6T1 |
ON Semiconductor |
(NST3946DXV6T1 / NST3946DXV6T5) Dual General Purpose Transistor | |
11 | NST3946DXV6T5 |
ON Semiconductor |
(NST3946DXV6T1 / NST3946DXV6T5) Dual General Purpose Transistor | |
12 | NST30010MXV6T1G |
ON Semiconductor |
Dual Matched General Purpose Transistor |