The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP9.
Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 45 A)
Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP90N055VUK-E1-AY
*1 Pure Sn (Tin)
Tape 2500 p/reel
Taping (E1 type)
NP90N055VUK-E2-AY
*1
Taping (E2 type)
Note:
*1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-252 (MP-3ZP)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP90N055MUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
2 | NP90N055NUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
3 | NP90N03G |
natlinear |
30V N-Channel Enhancement Mode MOSFET | |
4 | NP90N03VHG |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
5 | NP90N03VLG |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
6 | NP90N04MUG |
Renesas |
N-CHANNEL POWER MOS FET | |
7 | NP90N04MUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
8 | NP90N04NUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
9 | NP90N04VLK |
Renesas |
N-channel Power MOSFET | |
10 | NP90N04VUK |
Renesas |
N-Channel MOSFET | |
11 | NP90N06VDK |
Renesas |
N-Channel MOSFET | |
12 | NP90N06VLG |
Renesas |
N-Channel MOSFET |