NP90N03G - natlinear

NP90N03G 30V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP90N03G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features  VDS =30V，ID =90A RDS(ON)(Typ.)=3.8mΩ @VGS=10V RDS(ON)(Typ.)=5.1mΩ @VGS=4.5V High power and current handing capability  Lead free product is acquired  Surface mou.

Features

 VDS =30V，ID =90A RDS(ON)(Typ.)=3.8mΩ @VGS=10V RDS(ON)(Typ.)=5.1mΩ @VGS=4.5V High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment Application  Load switch Package  TO-252-2L XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP90N03G-G Storage Temperature -55°C to +150°C Package TO-252-2L Devices Per Reel 2500 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C TC=100°C Pulsed Drain Current Av.