NP80N06ELD - Renesas

NP80N06ELD N-CHANNEL POWER MOS FET

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2360 pF (TYP.) • Built-in Gate protection diode ORDERING IN.

Features

• Channel Temperature 175 degree rated
• Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A)
• Low Ciss : Ciss = 2360 pF (TYP.)
• Built-in Gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP80N06CLD TO-220AB NP80N06DLD TO-262 NP80N06ELD TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 Gate to Source Voltage VGSS ±20 Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) ±80 ±210 Total Power Dissipation (TA = 25 °C) PT 1.8 Total Power Dissipation (Tc.