This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2360 pF (TYP.) • Built-in Gate protection diode ORDERING IN.
• Channel Temperature 175 degree rated
• Super Low On-state Resistance
RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A)
• Low Ciss : Ciss = 2360 pF (TYP.)
• Built-in Gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP80N06CLD
TO-220AB
NP80N06DLD
TO-262
NP80N06ELD
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
Gate to Source Voltage
VGSS
±20
Drain Current (DC) Drain Current (Pulse) Note1
ID(DC) ID(pulse)
±80 ±210
Total Power Dissipation (TA = 25 °C)
PT
1.8
Total Power Dissipation (Tc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP80N06CLD |
Renesas |
N-CHANNEL POWER MOS FET | |
2 | NP80N06ELD |
Renesas |
N-CHANNEL POWER MOS FET | |
3 | NP80N06MLG |
NEC |
MOSFET | |
4 | NP80N06NLG |
NEC |
MOSFET | |
5 | NP80N06PLG |
NEC |
MOSFET | |
6 | NP80N03CDE |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
7 | NP80N03CLE |
NEC |
SWITCHING N-CHANNEL POWER MOS FET | |
8 | NP80N03CLE |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
9 | NP80N03DDE |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
10 | NP80N03DLE |
NEC |
SWITCHING N-CHANNEL POWER MOS FET | |
11 | NP80N03DLE |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
12 | NP80N03EDE |
NEC |
SWITCHING N-CHANNEL POWER MOSFET |