Schematic diagram The NP4614QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel: VDS =40V,ID =10A RDS(ON)=15.5mΩ (typical) @ VGS=10V RDS(ON)=20mΩ (typical) @ VGS=4.5V P-Channe.
N-channel: VDS =40V,ID =10A RDS(ON)=15.5mΩ (typical) @ VGS=10V RDS(ON)=20mΩ (typical) @ VGS=4.5V P-Channel: VDS =-40V,ID =-10A RDS(ON)=29mΩ (typical) @ VGS=-10V RDS(ON)=40mΩ (typical) @ VGS=-4.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating N-CH P-CH Marking and pin assignment PDFN3×3-8L (Top View) S1 1 G1 2 S2 3 G2 4 4614 XXXX 8 D1 7 D1 6 D2 5 D2 Application Pch+Nch Complementary MOSFET for DC-FAN H-Bridge application HF Pb Ordering Information Part Number NP4614QR-G Storage Temperature .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP4606G |
natlinear |
30V N And P-Channel Enhancement Mode MOSFET | |
2 | NP4008SR |
natlinear |
40V N-Channel Enhancement Mode MOSFET | |
3 | NP40N055CLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
4 | NP40N055DLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
5 | NP40N055ELE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
6 | NP40N055KLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
7 | NP40N055MLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
8 | NP40N055NLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
9 | NP40N10PDF |
Renesas |
N-channel Power MOS FET | |
10 | NP40N10VDF |
Renesas |
N-channel Power MOS FET | |
11 | NP40N10YDF |
Renesas |
N-channel Power MOS FET | |
12 | NP4201MF02 |
NEC |
COSMOPLASMA |