Schematic diagram The NP4606G uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. D1/D2 General Features N-channel: VDS =30V,ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ VGS=4.5V P-Ch.
N-channel: VDS =30V,ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ VGS=4.5V P-Channel: VDS =-30V,ID =-12A RDS(ON)=28mΩ (typical) @ VGS=-10V RDS(ON)=36mΩ (typical) @ VGS=-4.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating 100% UIS tested Application N-CH P-CH Marking and pin assignment D1/D2 NP4606 XXXX YYYY S1 G1 S2 G2 DC/DC Converter Ideal for high-frequency switching and synchronous rectification XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP4614QR |
natlinear |
N And P-Channel Enhancement Mode MOSFET | |
2 | NP4008SR |
natlinear |
40V N-Channel Enhancement Mode MOSFET | |
3 | NP40N055CLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
4 | NP40N055DLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
5 | NP40N055ELE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
6 | NP40N055KLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
7 | NP40N055MLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
8 | NP40N055NLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
9 | NP40N10PDF |
Renesas |
N-channel Power MOS FET | |
10 | NP40N10VDF |
Renesas |
N-channel Power MOS FET | |
11 | NP40N10YDF |
Renesas |
N-channel Power MOS FET | |
12 | NP4201MF02 |
NEC |
COSMOPLASMA |