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NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices a.
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25°C
Derate Above 25°C
VCEO VCBO VEBO VCEX
IC ICM IB PD
250 Vdc 400 Vdc 5.0 Vdc 400 Vdc 16 Adc 30 Adc 5.0 Adc 200 W 1.6 W/°C
Operating and Storage Junction Temperature Ra.
NJW21193G - INCHANGE
·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for ro.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NJW21194G |
ON Semiconductor |
Silicon Power Transistors |
|
| 2 | NJW21194G |
INCHANGE |
NPN Transistor |
|
| 3 | NJW2303 |
New Japan Radio |
BASE BAND INTERFACE IC |
|
| 4 | NJW2307 |
New Japan Radio |
FM Modulation/Demodulation |
|
| 5 | NJW2311 |
JRC |
Phase Shifter-less Wide Band FM IF Demodulator IC |
|
| 6 | NJW0281 |
INCHANGE |
NPN Transistor |
|
| 7 | NJW0281G |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | NJW0281G |
ON Semiconductor |
NPN-PNP Power Bipolar Transistors |
|
| 9 | NJW0302 |
INCHANGE |
PNP Transistor |
|
| 10 | NJW0302G |
INCHANGE |
PNP Power Transistor |
|
| 11 | NJW0302G |
ON Semiconductor |
NPN-PNP Power Bipolar Transistors |
|
| 12 | NJW0302G |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|