·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0281 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO .
ector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A VBE(on) Base−Emitter On Voltage IC = 5.0 A, VCE = 5.0 V ICBO Collector Cutoff Current VCB= 250V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V hFE1 DC Current Gain IC= 1A ; VCE= 5V hFE2 DC Current Gain IC= 3A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz fT Current-Gain—Bandwidth Product IC=-1A ; VCE= 5V ;ftest= 1.0MHz MIN TYP. MAX UNIT -250 V -1.0 V -1.2 V -10 μA -5 μA 75 150 75 150 75.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NJW0302G |
INCHANGE |
PNP Power Transistor | |
2 | NJW0302G |
ON Semiconductor |
NPN-PNP Power Bipolar Transistors | |
3 | NJW0302G |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
4 | NJW0281 |
INCHANGE |
NPN Transistor | |
5 | NJW0281G |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | NJW0281G |
ON Semiconductor |
NPN-PNP Power Bipolar Transistors | |
7 | NJW1102 |
New Japan Radio |
DOLBY PRO LOGIC SURROUND DECODER | |
8 | NJW1102A |
New Japan Radio |
DOLBY PRO LOGIC SURROUND DECODER | |
9 | NJW1103 |
New Japan Radio |
DOLBY PRO LOGIC SURROUND DECODER | |
10 | NJW1104 |
New Japan Radio |
DOLBY PRO LOGIC SURROUND DECODER | |
11 | NJW1105 |
New Japan Radio |
DUAL AUDIO POWER AMPLIFIER | |
12 | NJW1106 |
New Japan Radio |
DOLBY PRO LOGIC SURROUND DECODER |