NJW0302 |
Part Number | NJW0302 |
Manufacturer | INCHANGE |
Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0281 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
Features |
ector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
VBE(on) Base−Emitter On Voltage
IC = 5.0 A, VCE = 5.0 V
ICBO
Collector Cutoff Current
VCB= 250V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.5A ; VCE= 5V
hFE1
DC Current Gain
IC= 1A ; VCE= 5V
hFE2
DC Current Gain
IC= 3A ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC=-1A ; VCE= 5V ;ftest= 1.0MHz
MIN TYP. MAX UNIT
-250
V
-1.0 V
-1.2 V
-10 μA
-5 μA
75
150
75
150
75... |
Document |
NJW0302 Data Sheet
PDF 190.13KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NJW0302G |
INCHANGE |
PNP Power Transistor | |
2 | NJW0302G |
ON Semiconductor |
NPN-PNP Power Bipolar Transistors | |
3 | NJW0302G |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
4 | NJW0281 |
INCHANGE |
NPN Transistor | |
5 | NJW0281G |
Inchange Semiconductor |
Silicon NPN Power Transistor |