NGW75T65H3DF - nexperia

NGW75T65H3DF 75A high speed trench field-stop IGBT

The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverte.

Features

• Collector current (IC) rated at 75 A
• Low conduction and switching losses
• Stable and tight parameters for easy parallel operation
• Maximum junction temperature of 175 °C
• Fully rated as a soft fast reverse recovery diode
• RoHS compliant, lead-free plating 3. Applications
• Power inverters
• Uninterruptible Power Supply (UPS) inverter
• Photovoltaic (PV) strings
• EV charging
• Induction heating
• Welding 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VCE collector-emitter voltage Tj = 25 °C Tj operating junction temperature Min Max Unit .