NGW50T65H3DFP - nexperia

NGW50T65H3DFP 50A high speed trench field-stop IGBT

The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power invert.

Features

• Collector current (IC) rated at 50 A
• Low conduction and switching losses
• Stable and tight parameters for easy parellel operation
• Maximum junction temperature of 175 °C
• Fully rated as a soft fast reverse recovery diode
• RoHS compliant, lead-free plating 3. Applications
• Power inverters
• Uninterruptible Power Supply (UPS) inverter
• Photovoltaic (PV) strings
• EV charging
• Induction heating
• Welding 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCE collector-emitter voltage Tj operating junction temperature Conditions Tj = 25 °C Min Max Unit -.