NDS8434A - Fairchild

NDS8434A Single P-Channel MOSFET

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook com.

Features

-7.8 A, -20 V. RDS(ON) = 0.024 Ω @ VGS = -4.5 V RDS(ON) = 0.032 Ω @ VGS = -2.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ 5 6 7 4 3 2 1 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A = 25°C unless otherwise noted NDS8434A -20 ±8 (Note 1a) Units V V A W -7.8 -25 2.5 1.2 1 -55 to 150 Maximum Power Dissipation .