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NDS8434A |
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| Part Number | NDS8434A |
| Manufacturer | Fairchild |
| Description | SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to ... |
| Features |
-7.8 A, -20 V. RDS(ON) = 0.024 Ω @ VGS = -4.5 V RDS(ON) = 0.032 Ω @ VGS = -2.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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5 6 7
4
3
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1
8
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A = 25°C unless otherwise noted
NDS8434A -20 ±8
(Note 1a)
Units V V A W
-7.8 -25 2.5 1.2 1 -55 to 150
Maximum Power Dissipation
... |
| Document |
 NDS8434A Data Sheet
PDF 329.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDS8434 |
ON Semiconductor |
Single P-Channel Enhancement Mode Field Effect Transistor |
|
| 2 | NDS8434 |
Fairchild |
Single P-Channel MOSFET |
|
| 3 | NDS8433 |
Fairchild |
single P-Channel MOSFET |
|
| 4 | NDS8435 |
Fairchild |
Single P-Channel MOSFET |
|
| 5 | NDS8435A |
Fairchild |
Single P-Channel MOSFET |
|