The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =140A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.3mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized av.
● VDS = 82V,ID =140A RDS(ON) < 6mΩ @ VGS=10V
(Typ:4.3mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCE82H140 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
2 | NCE82H110 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE82H110D |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
4 | NCE8205 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
5 | NCE8205 |
JCST |
N-Channel MOSFETS | |
6 | NCE8205A |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
7 | NCE8205B |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
8 | NCE8205E |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
9 | NCE8290 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
10 | NCE8290B |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
11 | NCE8295A |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
12 | NCE8295AWD |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |