The NCE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capabil.
● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D1 G1
G2
D2
S1 S2
Schematic diagram
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
TSSOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
8205A
NCE8205A
TSSOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Sourc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCE8205 |
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2 | NCE8205 |
JCST |
N-Channel MOSFETS | |
3 | NCE8205B |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
4 | NCE8205E |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
5 | NCE8290 |
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N-Channel Enhancement Mode Power MOSFET | |
6 | NCE8290B |
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7 | NCE8295A |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
8 | NCE8295AWD |
NCE Power Semiconductor |
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9 | NCE82H110 |
NCE Power Semiconductor |
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10 | NCE82H110D |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
11 | NCE82H140 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
12 | NCE82H140D |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |