NCE7190 - NCE Power

NCE7190 N-Channel Enhancement Mode Power MOSFET

The NCE719 0 uses adv anced trenc h techno logy and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V DS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V ( Typ:5.9mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized.

Features

● V DS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V ( Typ:5.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Schematic diagram Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking NCE7190 NCE7 Device .