NCE7075 - NCE Power

NCE7075 NCE N-Channel Enhancement Mode Power MOSFET

The NCE7075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =70V,ID =75A RDS(ON) < 12mΩ @ VGS=10V (Typ:9.5mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good sta.

Features

● VDS =70V,ID =75A RDS(ON) < 12mΩ @ VGS=10V (Typ:9.5mΩ) Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Pac.