NCE4618SP - NCE Power Semiconductor

NCE4618SP N-Channel Enhancement Mode Power MOSFET

The NCE4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. Package Dimensions Unit : mm .

Features

● VSSS =20V,IS =6A
● 2.5V drive
● Common-drain type
● 2KV HBM Package Information
● Minimum Packing Quantity : 5,000 pcs./reel Application
● Lithium-ion battery charging and discharging switch Equivalent Circuit Marking and pin assignment CSP top view Absolute Maximum Ratings (TA =25℃unless otherwise noted) Symbol Parameter VSSS Source to Source Voltage VGSS Gate-Source Voltage Limit 20 ±12 IS Source Current(DC) 6 ISP Source Cur.