NCE4606A - NCE Power Semiconductor

NCE4606A N & P-Channel Enhancement Mode Power MOSFET

The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V ● P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V ● High power a.

Features

● N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
● P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width NCE4606A NCE4606A SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Quantity 2500 units Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.