NCE40P40K - NCE Power Semiconductor

NCE40P40K P-Channel Enhancement Mode Power MOSFET

The NCE40P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and unifo.

Features

● VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE40P40K NCE40P40K TO-252-2L Reel Size - Tape width -.