NCE40P05S - NCE Power Semiconductor

NCE40P05S P-Channel Enhancement Mode Power MOSFET

The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-40V,ID =-5.3A RDS(ON) <80mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and.

Features

● VDS =-40V,ID =-5.3A RDS(ON) <80mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.5V Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation Application Marking and pin assignment
● Power switching application
● Hard switched and high frequency circuits
● DC-DC converter SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width 40P05 NCE40P05S SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter.