NCE2025S - NCE Power Semiconductor

NCE2025S N-Channel Enhancement Mode Power MOSFET

The NCE2025S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ●VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Schematic diagram.

Features

●VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current Schematic diagram Application
● DC/DC Converter
● Battery protection Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package NCE2025S NCE2025S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuou.