NCE2025I - NCE Power Semiconductor

NCE2025I N-Channel Enhancement Mode Power MOSFET

The NCE2025I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =25A RDS(ON) <13mΩ @ VGS=10V (Typ:10.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniform.

Features

● VDS =20V,ID =25A RDS(ON) <13mΩ @ VGS=10V (Typ:10.5mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Load switching
● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width .