NCE1579 - NCE Power Semiconductor

NCE1579 NCE N-Channel Enhancement Mode Power MOSFET

The NCE1579 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =150V,ID =79A RDS(ON) < 19mΩ @ VGS=10V (Typ:16mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformi.

Features

● VDS =150V,ID =79A RDS(ON) < 19mΩ @ VGS=10V (Typ:16mΩ)
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220 top view Package Marking And Ordering Information Device Marking Device Device Packag.