NCE1505S - NCE Power Semiconductor

NCE1505S NCE N-Channel Enhancement Mode Power MOSFET

The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ） ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Low Gate to Drain Charge .

Features

● VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ）
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Low Gate to Drain Charge to Reduce Switching Losses Schematic diagram Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply Marking and pin Assignment 100% ΔVds TESTED! SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package 1505 NCE1505S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (.