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Pin Name No. I/O Description VDD1 1 Power Input side power supply. A good quality bypassing capacitor is required from this pin to GND1 and should be placed close to the pins for best results. The under voltage lockout (UVLO) circuit enables the device to operate at power on when a typical supply voltage higher than VUVLO1−OUT−ON is present. Please.
• High Peak Output Current (+6.5 A/−6.5 A)
• Low Clamp Voltage Drop Eliminates the Need of Negative Power
Supply to Prevent Spurious Gate Turn−on (Version A)
• Short Propagation Delays with Accurate Matching
• IGBT/MOSFET Gate Clamping during Short Circuit
• IGBT/MOSFET Gate Active Pull Down
• Tight UVLO Thresholds for Bias Flexibility
• Wide Bias Voltage Range including Negative VEE2 (Version B)
• 3.3 V, 5 V, and 15 V Logic Input
• 3.75 kVRMS VISO (I−O) (to meet UL1577 Requirements)
• Safety and Regulatory Approvals:
♦ UL1577 Certified, 3750 VACRMS for 1 Minute ♦ DIN VDE V 0884−11 Certificati.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NCD57081B |
ON Semiconductor |
Isolated High Current IGBT Gate Driver |
|
| 2 | NCD57081C |
ON Semiconductor |
Isolated High Current IGBT Gate Driver |
|
| 3 | NCD57080A |
ON Semiconductor |
Isolated High Current IGBT Gate Driver |
|
| 4 | NCD57080B |
ON Semiconductor |
Isolated High Current IGBT Gate Driver |
|
| 5 | NCD57080C |
ON Semiconductor |
Isolated High Current IGBT Gate Driver |
|
| 6 | NCD57084 |
ON Semiconductor |
IGBT Gate Driver |
|
| 7 | NCD57085 |
ON Semiconductor |
Gate Driver IGBT |
|
| 8 | NCD5700 |
ON Semiconductor |
High Current IGBT Gate Driver |
|
| 9 | NCD57000 |
ON Semiconductor |
Isolated High Current IGBT Gate Driver |
|
| 10 | NCD57001 |
ON Semiconductor |
Isolated High Current IGBT Gate Driver |
|
| 11 | NCD57001F |
ON Semiconductor |
High Current IGBT Gate Driver |
|
| 12 | NCD5701A |
ON Semiconductor |
High Current IGBT Gate Drivers |
|