NAND512R4A2C - Numonyx

NAND512R4A2C NAND Flash Memories

. . . . 6 Memory array organization . . . . . . . 11 Signal descriptions . . . . . 13 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 3.10 3.11 Inputs/Outpu.

Features

● High density NAND Flash memories
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  – 512 Mbit memory array Cost effective solutions for mass storage applications x 8 or x 16 bus width Multiplexed Address/ Data FBGA
● NAND interface
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  – TSOP48 12 x 20 mm
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● Supply voltage: 1.8 V, 3.0 V Page size
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  – x 8 device: (512 + 16 spare) bytes x 16 device: (256 + 8 spare) words x 8 device: (16 K + 512 spare) bytes x 16 device: (8 K + 256 spare) words Random access: 12 µs (3 V)/15 µs (1.8 V) (max) Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min) Page Program time: 200 µs (typ)
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● Block size
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  – VFBGA55 8 x 10 x 1 mm VFBGA63 9 x 11 x 1.