NAND512R3A2S - Numonyx

NAND512R3A2S NAND SLC small page 70 nm Discrete

Numonyx® NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features  Density – 512 Mbit: 4096 blocks  NAND Flash interface – x8 or x16 bus width – Multiplexed address/data  Memory configuration – Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words – Block size: x8 device: (16K + 512 spare) B.

Features

 Density
  – 512 Mbit: 4096 blocks
 NAND Flash interface
  – x8 or x16 bus width
  – Multiplexed address/data
 Memory configuration
  – Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words
  – Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words
 Supply voltage: 1.8 V, 3 V
 Read/write performance
  – Random access: 12 µs (3 V)/15 µs(1.8 V) (max)
  – Sequential access: 30 ns (3 V)/50 ns (1.8 V)(min)
  – Page program time: 200 µs (typ)
  – Block erase time: 2 ms (typ)
  – Programming performance (typ): x8 device: 2.3 MByte/s x16 device: 2.4 MByte/s
 Addit.