28F512 512K (64K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 1 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g5% VPP Y High-Performance Read 120 ns Maximum Access Time Y CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Standb.
g10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y ETOX II Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Y JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC (See Packaging Spec Order 231369) Y Extended Temperature Options Intel’s 28F512 CMOS flash memory offers the most cost-effective and reliable alternative for read write random access nonvolatile memory The 28F512.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | N28F001BX |
Intel |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY | |
2 | N28F010 |
Intel |
1024K (128K x 8) CMOS FLASH MEMORY | |
3 | N28F020 |
Intel |
256K x 8 CMOS FLASH MEMORY | |
4 | N28F256 |
Intel |
256K CMOS Flash Memory | |
5 | N28F256A |
Intel |
256K CMOS Flash Memory | |
6 | N2825TE400 |
IXYS |
Phase Control Thyristor | |
7 | N2825TE450 |
IXYS |
Phase Control Thyristor | |
8 | N2825TJ400 |
IXYS |
Phase Control Thyristor | |
9 | N2825TJ450 |
IXYS |
Phase Control Thyristor | |
10 | N282CH |
YZPST |
HIGH POWER THYRISTOR | |
11 | N2830HE260 |
IXYS |
Phase Control Thyristor | |
12 | N2830HE280 |
IXYS |
Phase Control Thyristor |