E 28F020 2048K (256K X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase 2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µS Typical Byte-Program 4 second Chip-Program n 100,000 Erase/Program Cycles n 12.0 V ±5% VPP n High-Performance Read 90 ns Maximum Access Time n CMOS Low Power Consumption 10 mA Typical Active Current 50 .
±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing n ETOX™ Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience n JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Packaging Spec., Order #231369) n Extended Temperature Options Intel’s 28F020 CMOS flash memory offers the most cost-effectiv.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | N28F001BX |
Intel |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY | |
2 | N28F010 |
Intel |
1024K (128K x 8) CMOS FLASH MEMORY | |
3 | N28F256 |
Intel |
256K CMOS Flash Memory | |
4 | N28F256A |
Intel |
256K CMOS Flash Memory | |
5 | N28F512 |
Intel |
512K (64K x 8) CMOS FLASH MEMORY | |
6 | N2825TE400 |
IXYS |
Phase Control Thyristor | |
7 | N2825TE450 |
IXYS |
Phase Control Thyristor | |
8 | N2825TJ400 |
IXYS |
Phase Control Thyristor | |
9 | N2825TJ450 |
IXYS |
Phase Control Thyristor | |
10 | N282CH |
YZPST |
HIGH POWER THYRISTOR | |
11 | N2830HE260 |
IXYS |
Phase Control Thyristor | |
12 | N2830HE280 |
IXYS |
Phase Control Thyristor |