MXR9745T1 - Motorola

MXR9745T1 31.5 dBm / 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MXR9745T1/D Advance Information The RF Small Signal Line Silicon Lateral FET MXR9745T1 MXR9745RT1 31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET N–Channel Enhancement–Mode MOSFET Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellula.

Features

n Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 35 25 ± 10 2 10 100
  – 65 to +150 150 Unit Vdc Vdc Vdc Adc W mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 10 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain
  –Source Leakage Current (VDS = 35 V, VGS = 0) Gate
  –Source Leakage Current (VGS = 5 V, VDS = 0) IDSS IGSS
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  – 10 1 µAdc µAdc NOTE
  – CAUTION
  – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in ha.