MXR9745T1 |
Part Number | MXR9745T1 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MXR9745T1/D Advance Information The RF Small Signal Line Silicon Lateral FET MXR9745T1 MXR9745RT1 31.5 dBm, 850 MHz HIGH FREQUENCY POWE... |
Features |
n Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 35 25 ± 10 2 10 100 – 65 to +150 150 Unit Vdc Vdc Vdc Adc W mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 10 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain –Source Leakage Current (VDS = 35 V, VGS = 0) Gate –Source Leakage Current (VGS = 5 V, VDS = 0) IDSS IGSS – – – – 10 1 µAdc µAdc NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in ha... |
Document |
MXR9745T1 Data Sheet
PDF 53.39KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MXR9745RT1 |
Motorola |
31.5 dBm / 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET | |
2 | MXR9150G |
MEMSIC |
Tri Axis Accelerometer | |
3 | MXR9150M |
MEMSIC |
Tri Axis Accelerometer | |
4 | MXR9500G |
ETC |
Tri Axis Accelerometer | |
5 | MXR9500M |
ETC |
Tri Axis Accelerometer |