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MX26L12811MC - MXIC

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MX26L12811MC 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY

The MXIC's MX26L12811MC series MTP use the most advance 2 bits/cell Nbit technology, double the storage capacity of memory cell. The device provide the high density MTP memory solution with reliable performance and most cost-effective. The device organized as by 8 bits or by 16 bits of output bus. The device is packaged in 44-Lead SOP. It is designed to be r.

Features


• 3.0V to 3.6V operation voltage
• Block Structure - 128 x 128Kbyte Erase Blocks
• Fast random / page mode access time - 120/25 ns Read Access Time (page depth:4-word)
• 32-Byte Write Buffer www.DataSheet4U.com - 6 us/byte Effective Programming Time
• High Performance - Block erase time: 2s typ. - Byte programming time: 210us typ. - Block programming time: 0.8s typ. (using Write to Buffer Command)
• Program/Erase Endurance cycles: 10 cycles Packaging Performance
• Low power dissipation - typical 15mA active current for page mode read - 80uA/(max.) standby current - 44-Lead SOP Technology - N.

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