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MX26L12811MC |
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| Part Number | MX26L12811MC |
| Manufacturer | MXIC |
| Description | The MXIC's MX26L12811MC series MTP use the most advance 2 bits/cell Nbit technology, double the storage capacity of memory cell. The device provide the high density MTP memory solution with reliable p... |
| Features |
• 3.0V to 3.6V operation voltage • Block Structure - 128 x 128Kbyte Erase Blocks • Fast random / page mode access time - 120/25 ns Read Access Time (page depth:4-word) • 32-Byte Write Buffer www.DataSheet4U.com - 6 us/byte Effective Programming Time • High Performance - Block erase time: 2s typ. - Byte programming time: 210us typ. - Block programming time: 0.8s typ. (using Write to Buffer Command) • Program/Erase Endurance cycles: 10 cycles Packaging Performance • Low power dissipation - typical 15mA active current for page mode read - 80uA/(max.) standby current - 44-Lead SOP Technology - N... |
| Document |
 MX26L12811MC Data Sheet
PDF 305.39KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MX26L1620 |
Macronix International |
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| 2 | MX26L3220 |
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| 3 | MX26L6419 |
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| 4 | MX26L6420 |
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| 5 | MX26LV004B |
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(MX26LV004T/B) 4M-Bit CMOS Single Voltage Flash Memory |
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