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The MX26C512A is a 12.75V/5V, 512K-bit, MTP EPROMTM (Multiple Time Programmable Read Only Memory). It is organized as 64K words by 8 bits per word, operates from a + 5 volt supply, has a static standby mode, and features fast single address location programming. It is designed to be reprogrammed and erased by an EPROM programmer or on-board. All programming/.
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64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns Totally static operation Completely TTL compatible
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Operating current: 30mA Standby current: 100uA 100 minimum erase/program cycles Package type: - 28 pin plastic DIP Y - 28 pin SOP OG L O - 32 pin PLCC HN - 28 pin TSOP(I) TEC
GENERAL DESCRIPTION
The MX26C512A is a 12.75V/5V, 512K-bit, MTP EPROMTM (Multiple Time Programmable Read Only Memory). It is organized as 64K words by 8 bits per word, operates from a + 5 v.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MX26C1000A |
Macronix International |
CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
|
| 2 | MX26C1000B |
Macronix International |
CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
|
| 3 | MX26C2000B |
Macronix International |
CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
|
| 4 | MX26C4000B |
Macronix International |
CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
|
| 5 | MX26 |
AMI |
CMOS Gate Array |
|
| 6 | MX26L12811MC |
MXIC |
128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY |
|
| 7 | MX26L1620 |
Macronix International |
16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
|
| 8 | MX26L3220 |
Macronix International |
32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
|
| 9 | MX26L6419 |
Macronix International |
64M [x16] SINGLE 3V PAGE MODE MTP MEMORY |
|
| 10 | MX26L6420 |
Macronix International |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM |
|
| 11 | MX26LV004B |
Macronix |
(MX26LV004T/B) 4M-Bit CMOS Single Voltage Flash Memory |
|
| 12 | MX26LV004T |
Macronix |
(MX26LV004T/B) 4M-Bit CMOS Single Voltage Flash Memory |
|