Super Fast Recovery Rectifier Module Type 200 A Features • High Surge Capability • Type 1000 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MUR2X100A10 VRRM = 1000 V IF(AV) = 200 A SOT-227 Package Maximum ratings Parameter Maximum recurrent peak reverse voltage Maximum DC blocking voltage Maximum RMS Voltage Operatin.
• High Surge Capability
• Type 1000 V VRRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MUR2X100A10
VRRM = 1000 V IF(AV) = 200 A
SOT-227 Package
Maximum ratings Parameter
Maximum recurrent peak reverse voltage Maximum DC blocking voltage Maximum RMS Voltage Operating temperature Storage temperature
Symbol
VRRM VDC VRMS Tj Tstg
Conditions
Value 1000 1000 700 -55 to 175 -55 to 175
Electrical characteristics at 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Average forward current (per pkg) Peak forward surge current (per leg)
IF(AV) IF.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MUR2X100A04 |
GeneSiC |
Super Fast Recovery Rectifier | |
2 | MUR2X120A04 |
GeneSiC |
Super Fast Recovery Rectifier | |
3 | MUR2X030A10 |
GeneSiC |
Super Fast Recovery Rectifier | |
4 | MUR2X060A02 |
GeneSiC |
Super Fast Recovery Rectifier | |
5 | MUR2X060A12 |
GeneSiC |
Super Fast Recovery Rectifier | |
6 | MUR20005CT |
Micro Commercial Components |
200 Amp Supre Fast Recovery Rectifier | |
7 | MUR20005CT |
America Semiconductor |
Silicon Super Fast Recovery Diode | |
8 | MUR20005CT |
Naina Semiconductor |
Super Fast Recovery Diode | |
9 | MUR20005CT |
GeneSiC |
Silicon Super Fast Recovery Diode | |
10 | MUR20005CT |
Motorola |
ULTRAFAST RECTIFIERS | |
11 | MUR20005CTR |
America Semiconductor |
Silicon Super Fast Recovery Diode | |
12 | MUR20005CTR |
Naina Semiconductor |
Super Fast Recovery Diode |