Super Fast Recovery Rectifier Module Type 120 A Features • High Surge Capability • Type 1200 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MUR2X060A12 VRRM = 1200 V IF(AV) = 120 A SOT-227 Package Maximum ratings Parameter Maximum recurrent peak reverse voltage Maximum DC blocking voltage Maximum RMS Voltage Operatin.
• High Surge Capability
• Type 1200 V VRRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MUR2X060A12
VRRM = 1200 V IF(AV) = 120 A
SOT-227 Package
Maximum ratings Parameter
Maximum recurrent peak reverse voltage Maximum DC blocking voltage Maximum RMS Voltage Operating temperature Storage temperature
Symbol
VRRM VDC VRMS Tj Tstg
Conditions
Value 1200 1200 840 -55 to 175 -55 to 175
Electrical characteristics at 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Average forward current (per pkg) Peak forward surge current (per leg)
IF(AV) IF.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MUR2X060A02 |
GeneSiC |
Super Fast Recovery Rectifier | |
2 | MUR2X030A10 |
GeneSiC |
Super Fast Recovery Rectifier | |
3 | MUR2X100A04 |
GeneSiC |
Super Fast Recovery Rectifier | |
4 | MUR2X100A10 |
GeneSiC |
Super Fast Recovery Rectifier | |
5 | MUR2X120A04 |
GeneSiC |
Super Fast Recovery Rectifier | |
6 | MUR20005CT |
Micro Commercial Components |
200 Amp Supre Fast Recovery Rectifier | |
7 | MUR20005CT |
America Semiconductor |
Silicon Super Fast Recovery Diode | |
8 | MUR20005CT |
Naina Semiconductor |
Super Fast Recovery Diode | |
9 | MUR20005CT |
GeneSiC |
Silicon Super Fast Recovery Diode | |
10 | MUR20005CT |
Motorola |
ULTRAFAST RECTIFIERS | |
11 | MUR20005CTR |
America Semiconductor |
Silicon Super Fast Recovery Diode | |
12 | MUR20005CTR |
Naina Semiconductor |
Super Fast Recovery Diode |