MTP1N80E - Motorola

MTP1N80E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance ov.

Features

Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature G S TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS ® D CASE 221A
  –06, Style 5 TO
  –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –to
  –Source Voltage Drain
  –to
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –to
  –Source Voltage — Continuous — Non
  –Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single P.