MTP1406M3 - CYStech Electronics

MTP1406M3 P-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode MOSFET Spec. No. : C733M3 Issued Date : 2011.05.16 Revised Date : 2013.08.12 Page No. : 1/5 MTP1406M3 Features • Single Drive Requirement • Low On-resistance, RDS(ON)=90.8mΩ@VGS=-10V, ID=-4A • Ultra High Speed Switching • Pb-free lead plated package BVDSS ID RDSON(MAX) -60V -4A 90.8mΩ Symb.

Features

• Single Drive Requirement
• Low On-resistance, RDS(ON)=90.8mΩ@VGS=-10V, ID=-4A
• Ultra High Speed Switching
• Pb-free lead plated package BVDSS ID RDSON(MAX) -60V -4A 90.8mΩ Symbol MTP1406M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current
*1 Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Operating Junction and Storage Temperature Note :
*1. Pulse width limited by maximum jun.