MTD1302 - Motorola

MTD1302 TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1302/D Advance Information HDTMOS E-FET ™ High Density Power FET DPAK for Surface Mount N–Channel Enhancement Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–.

Features

e & Reel, Add “T4” Suffix to Part Number MTD1302 TMOS POWER FET 20 AMPERES 30 VOLTS RDS(on) = 0.022 OHM ™ CASE 369A
  –13, Style 2 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –to
  –Source Voltage Drain
  –to
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –to
  –Source Voltage — Continuous www.DataSheet4U.com — Non
  –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain
  –to
  –Source Avalanc.