MTD10N10EL - ON Semiconductor

MTD10N10EL Power Field Effect Transistor DPAK

MTD10N10EL TMOS E−FET™ Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching .

Features

VDSS 100 V http://onsemi.com RDS(ON) TYP 0.22 W ID MAX 10 A N−Channel D
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
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• Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Pb−Free Package is Available G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) www.DataSheet4U.com Parameter Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous − Continuous @ 100°C − Single Pulse (.