MTA9D0P03V8 - CYStech

MTA9D0P03V8 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTA9D0P03V8 Spec. No. : C050V8 Issued Date : 2019.01.22 Revised Date : Page No. : 1/9 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package BVDSS ID@ TC=25C, VGS=-10V ID@ TA=25C, VGS=-10V RDSON @VGS=-10V, ID=-12A RDSON @VGS=-4.5V, ID.

Features

• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package BVDSS ID@ TC=25C, VGS=-10V ID@ TA=25C, VGS=-10V RDSON @VGS=-10V, ID=-12A RDSON @VGS=-4.5V, ID=-10A RDSON @VGS=-3V, ID=-5A -30V -44A -11.6A 8.9 mΩ(typ.) 11.8mΩ(typ.) 20.4 mΩ(typ.) Equivalent Circuit MTA9D0P03V8 Outline DFN3×3 G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTA9D0P03V8-0-T6-G Package Shipping DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and g.