MTA65N20H8 - Cystech Electonics

MTA65N20H8 N-Channel Enhancement Mode Power MOSFET

BVDSS ID @VGS=10V RDSON(TYP) VGS=10V, ID=11A VGS=5V, ID=5A 200V 24A 74mΩ 74mΩ The MTA65N20H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic.

Features

• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package Symbol MTA65N20H8 Outline DFN5×6 Pin 1 G：Gate D：Drain S：Source MTA65N20H8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Spec. No. : C866H8 Issued Date : 2014.02.10 Revised Date : Page No. : 2/10 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V (Note 1) Continuous Drain Current @ TC=100°C, VGS=10V (Not.