MT5C2565 64K x 4 SRAM MEMORY ARRAY Datasheet

MT5C2565 64K x 4 SRAM MEMORY ARRAY

The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) and output enable (OE) capability. These e.

Features

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• High Speed: 12, 15, 20, 25, 35, and 45ns Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE
• All inputs and outputs are TTL compatible NC A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 CE OE Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc A15 A14 A13 A12 A11 A10 NC NC DQ4 DQ3 DQ2 DQ1 WE A1 A0 NC Vcc NC 3 2 1 28 27 A2 4 A3 5 A4 6 A5 7 A6 8 A7 9 A8 1 0 A9 1 1 CE 1 2 13 14 15 16 17 DQ1 WE NC Vss OE 26 25 24 23 22 21 20 19 18 28-Pin DIP (C) (300 .

The same part from a different manufacturer

MT5C2565 - Micron

The MT5C2565 is organized as a 65,536 x 4 SRAM using a four-transistor memory cell with a high-speed, low-power.

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MT5C2565 - ASI