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MT5C2564 - ASI

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MT5C2564 SRAM

The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system des.

Features





• High Speed: 15, 20, 25, 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE
• All inputs and outputs are TTL compatible A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 CE Vss 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Vcc A15 A14 A13 A12 A11 A10 DQ4 DQ3 DQ2 DQ1 WE A1 A0 NC Vcc NC 3 2 1 28 27 A2 A3 A4 A5 A6 A7 A8 A9 CE 4 5 6 7 8 9 10 11 12 26 25 24 23 22 21 20 19 18 A15 A14 A13 A12 A11 A10 DQ4 DQ3 DQ2 24-Pin DIP (C) (300 MIL) 28-Pin LCC (EC).

The same part from a different manufacturer

Datasheet MT5C2564 - Micron MT5C2564

The MT5C2564 is organized as a 65,536 x 4 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS pro.

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