MT58L64L36D - Micron Semiconductor

MT58L64L36D (MT58LxxxLxxD) 2Mb SRAM

The Micron® SyncBurst™ SRAM family employs high- speed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 2Mb SyncBurst SRAMs integrate a 128K x 18, 64K x 32, or 64K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers 2Mb: 128K x 18, 64K x 32/.

Features

w w w NOT RECOMENDED FOR NEW DESIGNS 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM MT58L128L18D, MT58L64L32D, MT58L64L36D 3.3V VDD, 3.3V I/O, Pipelined, Double-Cycle Deselect
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (VDD)
• Separate +3.3V isolated output buffer supply (VDDQ)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion and address pipelining
• Clock-controlled and registered addresses, data I/Os and control signals
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