MT58L256V32P - Micron Semiconductor

MT58L256V32P (MT58Lxxxx) 8Mb SYNCBURST SRAM

The Micron® SyncBurst™ SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 8Mb SyncBurst SRAMs integrate a 512K x 18, 256K x 32, or 256K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive.

Features

w w w m o c 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM MT58L512L18P, MT58L256L32P, MT58L256L36P; MT58L512V18P, MT58L256V32P, MT58L256V36P 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (VDD)
• Separate +3.3V or +2.5V isolated output buffer supply (VDDQ)
• SNOOZE MODE for reduced-power standby
• Single-cycle deselect (Pentium® BSRAM-compatible)
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion and addres.