Part Number Example: MT58L256V36FT-10 The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 8Mb SyncBurst SRAMs integrate a 512K x 18, 256K x 32, or 256K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass th.
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8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F
3.3V VDD, 3.3V or 2.5V I/O, Flow-Through
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (VDD)
• Separate +3.3V or +2.5V isolated output buffer supply (VDDQ)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion and address pipelining
• Clock-controlled and registered addresses, data I/Os and co.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT58L256L36D |
Micron Semiconductor |
(MT58Lxxxx) 8Mb SYNCBURST SRAM | |
2 | MT58L256L36P |
Micron Semiconductor |
(MT58Lxxxx) 8Mb SYNCBURST SRAM | |
3 | MT58L256L32D |
Micron Semiconductor |
(MT58Lxxxx) 8Mb SYNCBURST SRAM | |
4 | MT58L256L32F |
Micron Semiconductor |
(MT58Lxxxx) 8Mb SYNCBURST SRAM | |
5 | MT58L256L32P |
Micron Semiconductor |
(MT58Lxxxx) 8Mb SYNCBURST SRAM | |
6 | MT58L256L18D1 |
Micron Technology |
(MT58LxxxLxxD1) 4Mb SRAM | |
7 | MT58L256L18F1 |
Micron Technology |
(MT58LxxxLxxF1) 4Mb SRAM | |
8 | MT58L256V18F1 |
Micron Technology |
(MT58LxxxLxxF1) 4Mb SRAM | |
9 | MT58L256V32F |
Micron Semiconductor |
(MT58Lxxxx) 8Mb SYNCBURST SRAM | |
10 | MT58L256V32P |
Micron Semiconductor |
(MT58Lxxxx) 8Mb SYNCBURST SRAM | |
11 | MT58L256V36F |
Micron Semiconductor |
(MT58Lxxxx) 8Mb SYNCBURST SRAM | |
12 | MT58L256V36P |
Micron Semiconductor |
(MT58Lxxxx) 8Mb SYNCBURST SRAM |